Description
HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFM10N90 IXFH/IXFM12N90 IXFH13N90 V DSS 900 V 900 V 90.
Features
* l International standard packages l Low R HDMOSTM process
DS (on)
l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS)
rated l Low package inductance
- easy to drive and to protect l Fast intrinsic Rectifier
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless
Applications
* l DC-DC converters l Synchronous rectification l Battery chargers l Switched-mode and resonant-mode
power supplies l DC choppers l AC motor control l Temperature and lighting controls l Low voltage relays
Advantages l Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole) l Space savings