IXFQ60N60X Datasheet - IXYS

IXFQ60N60X Power MOSFET

X-Class HiPerFETTM Power MOSFET Preliminary Technical Information IXFQ60N60X IXFH60N60X VDSS = ID25 = RDS(on) 600V 60A 55m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature.

IXFQ60N60X Features

* International Standard Packages

* Low RDS(ON) and QG

* Avalanche Rated

* Low Package Inductance Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* Switch-Mode and Resonant-Mode Power Supplies

* DC-DC Converters

* PFC Circuits

IXFQ60N60X Datasheet (167.23 KB)

IXFQ60N60X Datasheet Preview — Preview of IXFQ60N60X PDF

Datasheet Details

Part number:

IXFQ60N60X

Manufacturer:

IXYS

File Size:

167.23 KB

Description:

Power mosfet.

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IXFQ60N60X Power MOSFET IXYS

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