IXFT17N80Q - HiPerFET Power MOSFET

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IXYS

Part number	IXFT17N80Q
Manufacturer	IXYS
File Size	582.17 KB
Description	HiPerFET Power MOSFET
Datasheet	IXFT17N80Q Datasheet
Additional preview pages of the IXFT17N80Q datasheet.

z z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C Characteristic Values Min. Typ. Max. 800 2.0 4.5 ±100 25 1 0.60 V V nA µA mA Ω z z z IXYS advanced low Qg process International standard packages Low RDS (on) Unclamped Inductive Switching (UIS) rated Fast switching Molding epoxies meet UL 94 V-0 flammability classification Advantages z.

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Published: Oct 27, 2013 |