IXFV30N50PS, IXFH30N50P Datasheet - IXYS

IXFV30N50PS - Power MOSFET

Advance Technical Information PolarHVTM Power HiPerFET MOSFET N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode IXFH 30N50P IXFT 30N50P IXFQ 30N50P IXFV 30N50P IXFV 30N50PS VDSS ID25 RDS(on) trr = 500 V = 30 A = 200 mΩ < 200 ns www.DataSheet4U.com TO-3P (IXFQ) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C .

IXFV30N50PS Features

* z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect DS99414(06/05) © 2005 IXYS All rights reserved IXFH 30N50P IXFQ 30N50P IXFT 30N50P IXFV 30N50P IXFV 30N50PS Symbol Test Conditions Characteristic Values (TJ = 25°C,

IXFH30N50P_IXYS.pdf