IXFV110N25T Datasheet - IXYS Corporation

IXFV110N25T, Trench Gate Power HiperFET

Preliminary Technical Information Trench Gate Power HiperFET N-Channel Enhancement Mode Avalanche Rated IXFV110N25T IXFV110N25TS VDSS ID25 RDS(on) .

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Datasheet Details

Part number:

IXFV110N25T

Manufacturer:

IXYS Corporation

File Size:

204.41 KB

Description:

Trench Gate Power HiperFET

Features

* z z International standard packages Avalanche rated www. DataSheet4U. net Advantages Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 3mA VGS = ± 20V, VDS = 0V VDS = VDSS VGS = 0V TJ = 125°C Characteristic Values Min.

Applications

* z z z z z z Easy to mount Space savings High power density 10 μA 1 mA 24 mΩ VGS = 10V, ID = 0.5
* ID25, Notes 1, 2 z z z DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor drives Uninterruptible power supplies © 2008 IXYS CORPORATION,

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IXFV110N25T Trench Gate Power HiperFET IXYS Corporation

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