Datasheet Details
- Part number
- IXFV110N25T
- Manufacturer
- IXYS Corporation
- File Size
- 204.41 KB
- Datasheet
- IXFV110N25T_IXYSCorporation.pdf
- Description
- Trench Gate Power HiperFET
IXFV110N25T Description
Preliminary Technical Information Trench Gate Power HiperFET N-Channel Enhancement Mode Avalanche Rated IXFV110N25T IXFV110N25TS VDSS ID25 RDS(on) .
IXFV110N25T Features
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International standard packages Avalanche rated
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Advantages Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 3mA VGS = ± 20V, VDS = 0V VDS = VDSS VGS = 0V TJ = 125°C Characteristic Values Min.
IXFV110N25T Applications
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Easy to mount Space savings High power density
10 μA 1 mA 24 mΩ
VGS = 10V, ID = 0.5
* ID25, Notes 1, 2
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DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor drives Uninterruptible power supplies
© 2008 IXYS CORPORATION,
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