* z z International standard packages Avalanche rated www.DataSheet4U.net Advantages Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 3mA VGS = ± 20V, VDS = 0V VDS = VDSS VGS = 0V TJ = 125°C Characteristic Values Min.
IXFV110N25T Datasheet (204.41 KB)
IXFV110N25T
IXYS Corporation
204.41 KB
Trench gate power hiperfet.
Preliminary Technical Information
Trench Gate Power HiperFET
N-Channel Enhancement Mode Avalanche Rated
IXFV110N25T IXFV110N25TS
VDSS ID25
RDS(on)
.
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