Datasheet Specifications
- Part number
- IXFV110N10PS
- Manufacturer
- IXYS
- File Size
- 184.04 KB
- Datasheet
- IXFV110N10PS_IXYS.pdf
- Description
- PolarHT HiPerFET Power MOSFET
Description
PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Preliminary Data Sheet Symbol VDSS VDGR VGSS VGSM ID25.
Features
* z Fast intrinsic diode z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Advantages z Easy to mount z Space savings z High power density © 2005IXFV110N10PS Distributors
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