IXFV110N10PS Datasheet - IXYS

IXFV110N10PS, PolarHT HiPerFET Power MOSFET

PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Preliminary Data Sheet Symbol VDSS VDGR VGSS VGSM ID25.

datasheet Preview Page 1 from Datasheet4u.com

IXFV110N10PS_IXYS.pdf

IXFV110N10PS Datasheet Preview — Preview of IXFV110N10PS PDF

Datasheet Details

Part number:

IXFV110N10PS

Manufacturer:

IXYS

File Size:

184.04 KB

Description:

PolarHT HiPerFET Power MOSFET

Features

* z Fast intrinsic diode z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Advantages z Easy to mount z Space savings z High power density © 2005

IXFV110N10PS Distributors

📁 Related Datasheet

IXFV110N25T IXFV110N25TS IXFV12N100P IXFV12N100PS IXFV14N80P IXFV14N80PS

📌 All Tags

IXFV110N10PS PolarHT HiPerFET Power MOSFET IXYS

IXYS IXFV110N10PS-like datasheet