IXFV12N100P Description
PolarTM HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFH12N100P IXFV12N100P IXFV12N100PS VDSS ID25 .
IXFV12N100P Features
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Low RDS(on) and QG Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier
Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 125°C Characte
IXFV12N100P Applications
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High Power Density Easy to Mount Space Savings
20 μA 1.0 mA 1.05 Ω
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VGS = 10V, ID = 0.5
* ID25, Note 1
Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls
DS99920B(03/11)
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