IXFV22N50P, IXFV22N50PS Datasheet - IXYS

IXFV22N50P - PolarHV HiPerFET Power MOSFET

Advance Technical Information www.DataSheet4U.com PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFH 22N50P IXFV 22N50P IXFV 22N50PS VDSS ID25 RDS(on) = 500 V = 22 A = 270 mΩ Symbol VDSS VDGR VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings 500 500 ± 30 V V V A A A mJ mJ V/ns W °C °C °C °C °C TO-247 AD (IXFH) (TAB) TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C

IXFV22N50P Features

* z z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 270 mΩ Advantages z z z Easy to mount Space savings High power density DS99358A(03/05) © 2

IXFV22N50PS_IXYS.pdf