Datasheet4U Logo Datasheet4U.com

IXFV110N25TS, IXFV110N25T - Trench Gate Power HiperFET

IXFV110N25TS Description

Preliminary Technical Information Trench Gate Power HiperFET N-Channel Enhancement Mode Avalanche Rated IXFV110N25T IXFV110N25TS VDSS ID25 RDS(on) .

IXFV110N25TS Features

* z z International standard packages Avalanche rated www. DataSheet4U. net Advantages Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 3mA VGS = ± 20V, VDS = 0V VDS = VDSS VGS = 0V TJ = 125°C Characteristic Values Min.

IXFV110N25TS Applications

* z z z z z z Easy to mount Space savings High power density 10 μA 1 mA 24 mΩ VGS = 10V, ID = 0.5
* ID25, Notes 1, 2 z z z DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor drives Uninterruptible power supplies © 2008 IXYS CORPORATION,

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IXFV110N25TS, IXFV110N25T. Please refer to the document for exact specifications by model.
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
IXFV110N25TS, IXFV110N25T
Manufacturer
IXYS Corporation
File Size
204.41 KB
Datasheet
IXFV110N25T_IXYSCorporation.pdf
Description
Trench Gate Power HiperFET
Note
This datasheet PDF includes multiple part numbers: IXFV110N25TS, IXFV110N25T.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

📌 All Tags

Trench Gate Power HiperFET IXYS Corporation
IXYS Corporation IXFV110N25TS-like datasheet

IXFV110N25TS Stock/Price