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IXFV110N25TS, IXFV110N25T Datasheet - IXYS Corporation

IXFV110N25TS - Trench Gate Power HiperFET

Preliminary Technical Information Trench Gate Power HiperFET N-Channel Enhancement Mode Avalanche Rated IXFV110N25T IXFV110N25TS VDSS ID25 RDS(on) = 250V = 110A ≤ 24mΩ Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings.

IXFV110N25TS Features

* z z International standard packages Avalanche rated www.DataSheet4U.net Advantages Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 3mA VGS = ± 20V, VDS = 0V VDS = VDSS VGS = 0V TJ = 125°C Characteristic Values Min.

IXFV110N25T_IXYSCorporation.pdf

This datasheet PDF includes multiple part numbers: IXFV110N25TS, IXFV110N25T. Please refer to the document for exact specifications by model.
IXFV110N25TS Datasheet Preview Page 2 IXFV110N25TS Datasheet Preview Page 3

Datasheet Details

Part number:

IXFV110N25TS, IXFV110N25T

Manufacturer:

IXYS Corporation

File Size:

204.41 KB

Description:

Trench gate power hiperfet.

Note:

This datasheet PDF includes multiple part numbers: IXFV110N25TS, IXFV110N25T.
Please refer to the document for exact specifications by model.

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