IXFV15N100P, IXFH15N100P Datasheet - IXYS Corporation

IXFV15N100P Power MOSFET

PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH15N100P IXFV15N100P IXFV15N100PS VDSS ID25 RDS(on) trr = = ≤ ≤ 1000V 15A 760mΩ 300ns PLUS220 (IXFV) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum.

IXFV15N100P Features

* z z D = Drain TAB = Drain Maximum lead temperature for soldering Plastic body for 10s Mounting torque (TO-247) Mounting force (PLUS 220) TO-247 PLUS 220 types 300 260 1.13/10 11..65/2.5..14.6 6 4 z z International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated

IXFH15N100P_IXYSCorporation.pdf