Datasheet4U Logo Datasheet4U.com

IXFX26N60Q HiPerFET Power MOSFET

IXFX26N60Q Description

Advance Technical Information www.DataSheet4U.com HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg IX.

IXFX26N60Q Features

* l l Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25°C TJ = 125°C 4.5 ± 200 25 1 0.25 V V nA µA mA Ω l l l l l VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250µA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0

📥 Download Datasheet

Preview of IXFX26N60Q PDF
datasheet Preview Page 2

Datasheet Details

Part number
IXFX26N60Q
Manufacturer
IXYS
File Size
124.22 KB
Datasheet
IXFX26N60Q_IXYS.pdf
Description
HiPerFET Power MOSFET

📁 Related Datasheet

  • IXFX26N90 - Power MOSFET (IXYS Corporation)
  • IXFX20N120 - HiPerFET Power MOSFETs (IXYS Corporation)
  • IXFX20N120P - Power MOSFET (IXYS Corporation)
  • IXFX21N100F - Power MOSFET (IXYS Corporation)
  • IXFX220N15P - Polar Power MOSFET HiperFET (IXYS Corporation)
  • IXFX220N17T2 - GigaMOS TrenchT2 HiperFET Power MOSFET (IXYS Corporation)
  • IXFX25N90 - Power MOSFET (IXYS Corporation)
  • IXFX27N80Q - Power MOSFET (IXYS Corporation)

📌 All Tags

HiPerFET Power MOSFET IXYS
IXYS IXFX26N60Q-like datasheet