IXFX26N60Q Datasheet - IXYS

IXFX26N60Q HiPerFET Power MOSFET

Advance Technical Information www.DataSheet4U.com HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg IXFK 26N60Q IXFX 26N60Q VDSS ID25 RDS(on) = 600 V = 26 A = 0.25 Ω trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 .

IXFX26N60Q Features

* l l Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25°C TJ = 125°C 4.5 ± 200 25 1 0.25 V V nA µA mA Ω l l l l l VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250µA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0

IXFX26N60Q_IXYS.pdf