IXFX420N10T, IXFK420N10T Datasheet - IXYS

IXFX420N10T - Power MOSFET

Advance Technical Information GigaMOSTM Trench HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK420N10T IXFX420N10T VDSS = ID25 = RDS(on) ≤ trr ≤ 100V 420A 2.6mΩ 140ns TO-264 (IXFK) Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS PD dV/dt TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) External Lead Current Limit TC = 25°C, Pulse Width Limit

IXFX420N10T Features

* z International Standard Packages z High Current Handling Capability z Fast Intrinsic Diode z Avalanche Rated z Low RDS(on) Advantages z Easy to Mount z Space Savings z High Power Density Applications z Synchronous Recification z DC-DC Converters z Battery Chargers z Switch-Mode and Resonant-Mode Po

IXFK420N10T-IXYS.pdf