IXFX48N55 Datasheet - IXYS

IXFX48N55 Power MOSFET

HiPerFETTM Power MOSFETs Single MOSFET Die Avalanche Rated IXFK 48N55 IXFX 48N55 VDSS = 550 V ID25 = 48 A =RDS(on) 110 mW trr £ 250 ns Preliminary data Symbol VDSS V DGR VGS V GSM I D25 IDM I AR EAR E AS dv/dt PD TJ TJM Tstg TL M d Weight Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions TJ = 25°C to 150°C T J = 25°C to 150°C; R GS = 1 MW Continuous Transient T C = 25°C TC = 25°C, pulse width limited by TJM T C = 25°C TC = 25°C T C = 25°C IS £ IDM, di/dt £ 100 A/ms, .

IXFX48N55 Features

* Internationalstandardpackages

* Low R HDMOSTM process DS (on)

* Rugged polysilicon gate cell structure

* Unclamped Inductive Switching (UIS) rated

* Low package inductance - easy to drive and to protect

* Fast intrinsic rectifier Applications

IXFX48N55 Datasheet (46.76 KB)

IXFX48N55 Datasheet Preview — Preview of IXFX48N55 PDF

Datasheet Details

Part number:

IXFX48N55

Manufacturer:

IXYS

File Size:

46.76 KB

Description:

Power mosfet.

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IXFX48N55 Power MOSFET IXYS

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