IXGB200N60B3 Datasheet - IXYS

IXGB200N60B3 Medium speed low Vsat PT IGBT

GenX3TM 600V IGBT Medium speed low Vsat PT IGBTs 5-40 kHz switching IXGB200N60B3 VCES = 600V IC110 = 200A VCE(sat) ≤ 1.5V tfi(typ) = 183ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1 MΩ Continuous Transient TC = 25°C (limited by leads) TC = 110°C (chip capability) TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 1Ω Clamped inductive load @ VCE ≤ 600V TC = 25°C Maximum lead temperature for s.

IXGB200N60B3 Features

* z NPT IGBT technology z Low switching losses z Low tail current z No latch up z Short circuit capability z Positive temperature coefficient for easy paralleling z MOS input, voltage controlled z Optional ultra fast diode z International standard package Advantages z Space savings z High power densit

IXGB200N60B3-IXYS.pdf