IXGH2N250 High Voltage IGBT

IXYS

Description

Advance Technical Information High Voltage IGBTs for Capacitor Discharge Applications IXGH2N250 IXGT2N250 VCES = IC110 = VCE(sat) ≤ 2500V 2A 3.1V .

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Datasheet Specifications

Part number: IXGH2N250
Manufacturer: IXYS
File Size: 184.81 KB
Datasheet: IXGH2N250-IXYS.pdf
Description: High Voltage IGBT

Features

* z Optimized for Low Conduction and Switching Losses z International Standard Packages Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = 0.8
* VCES, VGE = 0V IGES VCE(sat) VCE = 0V, VGE = ± 20V IC = IC11

Applications

* IXGH2N250 IXGT2N250 VCES = IC110 = VCE(sat) ≤ 2500V 2A 3.1V TO-247 (IXGH) Symbol Test Conditions VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 50Ω Clamped I

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IXGH2N250 High Voltage IGBT IXYS

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