IXGL200N60B3 Datasheet - IXYS

IXGL200N60B3 Medium speed low Vsat PT IGBT

GenX3TM 600V IGBT Medium speed low Vsat PT IGBTs 5-40 kHz switching IXGL200N60B3 VCES = 600V IC110 = 90A VCE(sat) ≤ 1.50V tfi(typ) = 183ns Symbol VCES VCGR VGES VGEM IC25 I C110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (limited by leads) TC = 110°C (chip capability) TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 1Ω Clamped inductive load @ VCE ≤ 600V TC = 25°C Maximum lead temperatur.

IXGL200N60B3 Features

* z Silocon chip on Direct-Copper Bond (DCB) substrate z Isolated mounting surface z Square RBSOA z High current handling capability z 2500V electrical isolation Advantages z High power density z Low gate drive requirement Applications z Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z Bat

IXGL200N60B3 Datasheet (217.91 KB)