IXGR50N60B2D1, IXGR50N60B2 Datasheet - IXYS

IXGR50N60B2D1 HiPerFAST IGBT

HiPerFAST IGBT ISOPLUS247TM TM IXGR 50N60B2 IXGR 50N60B2D1 B2-Class High Speed IGBTs (Electrically Isolated Back Surface) Preliminary Data Sheet VCES IC25 VCE(sat) tfi(typ) www.DataSheet4U.com = 600 V = 68 A = 2.2 V = 65 ns IXGR_B2 IXGR_B2D1 Symbol V CES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C (limited by leads) TC = 110°C TC = 110°C (50N60B2D1 Diode) TC .

IXGR50N60B2D1 Features

* z z z z z C E (ISOLATED TAB) C = Collector W °C °C °C V DCB Isolated mounting tab Meets TO-247AD package Outline High current handling capability Latest generation HDMOSTM process MOS Gate turn-on - drive simplicity Applications z z 50/60 Hz RMS, t = 1m 5 2500 g 300 z z Maximum lead tempe

IXGR50N60B2_IXYS.pdf