IXGR50N60B2D1 - HiPerFAST IGBT
HiPerFAST IGBT ISOPLUS247TM TM IXGR 50N60B2 IXGR 50N60B2D1 B2-Class High Speed IGBTs (Electrically Isolated Back Surface) Preliminary Data Sheet VCES IC25 VCE(sat) tfi(typ) www.DataSheet4U.com = 600 V = 68 A = 2.2 V = 65 ns IXGR_B2 IXGR_B2D1 Symbol V CES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C (limited by leads) TC = 110°C TC = 110°C (50N60B2D1 Diode) TC .
IXGR50N60B2D1 Features
* z z z z z
C
E
(ISOLATED TAB)
C = Collector
W °C °C °C V
DCB Isolated mounting tab Meets TO-247AD package Outline High current handling capability Latest generation HDMOSTM process MOS Gate turn-on - drive simplicity
Applications
z z
50/60 Hz RMS, t = 1m 5
2500 g 300
z z
Maximum lead tempe