IXGR50N60BD1, IXGR50N60B Datasheet - IXYS Corporation

IXGR50N60BD1 HiPerFAST IGBT ISOPLUS247

www.DataSheet4U.com HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 50N60B IXGR 50N60BD1 IC25 VCE(sat) (Electrically Isolated Back Surface) tfi(typ) = 600 V = 75 A = 2.5 V = 85 ns (D1) Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load, L = 100 µH TC = 25°C Maximum Ratings 600 600 ± 20 ± 30 75 45 20.

IXGR50N60BD1 Features

* z z z z Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s VISOL Weight Symbol Test Conditions 50/60 Hz, RMS, t = 1minute leads-to-tab z DCB Isolated mounting tab Meets TO-247AD package Outline High current handling capability Latest generation HDMOSTM process MOS Gate t

IXGR50N60B_IXYSCorporation.pdf