IXGR 50N90B2D1 HiPerFASTTM IGBT with Fast Diode IXGR 50N90B2D1 B2-Class High Speed IGBT with Fast Diode (Electrically Isolated Back Surface) VCES IC25 VCE(sat) tfi typ = 900 V = 40 A = 2.9 V = 200 ns Symbol Test Conditions VCES V CGR VGES VGEM IC25 IC110 I F110 I CM SSOA (RBSOA) TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C (IGBT) TC = 110°C (diode) TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ ≤ 720V PC TC =
Datasheet Details
Part number:
IXGR50N90B2D1
Manufacturer:
IXYS
File Size:
211.36 KB
Description:
Igbt.