IXGR50N60C2 Datasheet - IXYS

IXGR50N60C2 HiPerFAST IGBT

www.DataSheet4U.com HiPerFAST TM IGBT with Diode C2-Class High Speed IGBTs Preliminary Data Sheet IXGR 50N60C2 IXGR 50N60C2D1 VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.7 V = 48 ns Symbol V CES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC VISOL TJ TJM Tstg Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ VCE ≤ 600 V TC = 25°C 50/60 Hz RMS, t = 1.

IXGR50N60C2 Features

* Very high frequency IGBT and anti-parallel FRED in one package

* Square RBSOA

* High current handling capability

* MOS Gate turn-on for drive simplicity

* Fast Recovery Epitaxial Diode (FRED) with soft recovery and low IRM Applications

* Switch-mode

IXGR50N60C2_IXYS.pdf