IXGT10N170A, IXGH10N170A Datasheet - IXYS

IXGT10N170A - High Voltage IGBT

High Voltage IGBT Preliminary Data Sheet IXGH 10N170A IXGT 10N170A VCES IC25 VCE(sat) tfi(typ) = 1700 V = 10 A = 6.0 V = 35 ns Symbol Test Conditions Maximum Ratings VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient 1700 1700 ±20 ±30 TC = 25°C TC = 90°C TC = 25°C, 1 ms 10 5 20 VGE = 15 V, TVJ = 125°C, RG = 22Ω Clamped inductive load ICM = 20 @ 0.8 VCES TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 22Ω 10 V V V V.

IXGT10N170A Features

* z International standard packages JEDEC TO-268 and JEDEC TO-247 AD z High current handling capability z Very high frequency z MOS Gate turn-on - drive simplicity z Rugged NPT structure z Molding epoxies meet UL 94 V-0 flammability classification Applications z Pulser circuits z AC motor speed contro

IXGH10N170A-IXYS.pdf