IXGT15N120BD1 Datasheet - IXYS Corporation

IXGT15N120BD1 Low VCE(sat) IGBT

Low VCE(sat) IGBT with Diode High Speed IGBT with Diode VDSS IXGH/IXGT 15N120BD1 IXGH/IXGT 15N120CD1 IC25 VCE(sat) 3.2 V 3.8 V 1200 V 30 A 1200 V 30 A Preliminary data Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Mounting torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 10 W Clamped inductive load TC = 25°C Maximum Ratings 1200 1200 ±20 ±30 30 15 60 ICM = .

IXGT15N120BD1 Features

* International standard packages: JEDEC TO-247AD & TO-268

* IGBT and anti-parallel FRED in one package

* MOS Gate turn-on - drive simplicity

* Fast Recovery Expitaxial Diode (FRED) - soft recovery with low IRM Applications Symbol Test Conditions Characteristic Values

IXGT15N120BD1_IXYSCorporation.pdf