IXGT15N120B2D1 Datasheet - IXYS

IXGT15N120B2D1 IGBT

Advance Technical Information HiPerFASTTM IGBT IXGH15N120B2D1 IXGT15N120B2D1 Optimized for 10-20 KHz hard switching and up to 100 KHz resonant switching VCES IC25 VCE(sat) tfi(typ) =1200 V = 30 A = 3.3 V = 137 ns Symbol Test Conditions Maximum Ratings VCES VCGR VGES VGEM IC25 IC90 I CM SSOA (RBSOA) PC TJ TJM Tstg TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C T C = 25°C, 1 ms V GE = 15 V, T VJ = 125°C, R G = 10 Ω Clamped inducti.

IXGT15N120B2D1 Features

* z International standard packages: JEDEC TO-247AD & TO-268 z IGBT and anti-parallel FRED in one package z MOS Gate turn-on - drive simplicity z Fast Recovery Expitaxial Diode (FRED) - soft recovery with low IRM Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BV CES VGE(th) I C =

IXGT15N120B2D1 Datasheet (116.94 KB)