IXGT16N170AH1 Datasheet (IXYS Corporation)

IXGT16N170AH1, High Voltage IGBT

High Voltage IGBT w/ Sonic Diode IXGT16N170A IXGH16N170A IXGT16N170AH1 IXGH16N170AH1 VCES IC90 VCE(sat) tfi(typ) = 1700V = 11A £ 5.0V = 35ns Symbol VCES VCGR VGES VGEM IC25 IC90 IF90 ICM SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGE = 1M Continuous Transient TC = 25C TC = 90C TC = 90C TC = 25C, 1ms VGE = 15V, TVJ = 125C, RG = 10 Clamped Inductive Load VGE = 15V, VCE = 1200V, TJ = 125°C RG = 22, Non Repetitive T

IXGT16N170AH1 Features

* High Blocking Voltage

* International Standard Packages

* Low Conduction Losses

* Anti-Parallel Sonic Diode

* High Blocking Voltage

* High Currect Handling Capability Advantages

* Low Gate Drive Requirement

* High Power Density Applications

* Switch-Mode and Res