IXGT40N120A2 High Voltage IGBT
High Voltage IGBT Low VCE(sat) Preliminary Data Sheet IXGH 40N120A2 IXGT 40N120A2 IXGH 40N120A2 IXGT 40N120A2 V = 1200 I CES = 75 V ≤C25 CE(sat) 2.0 V A V Symbol Test Conditions Maximum Ratings VCES VCES VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TTJsMtg TL TSOLD Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C Continuous Transient TC = 25°C, IGBT chip capability TC = 110°C TJ ≤ 150°C, tp < 300 μs VGE = 15 V, TVJ = 150°C, RG = 5 Ω Clamped inductive load, VCE < 960 V TC = 25°C Maximum .
IXGT40N120A2 Features
* International standard packages
* Low VCE(sat)
- for minimum on-state conduction
losses
* MOS Gate turn-on
- drive simplicity
Applications
* AC motor speed control
* DC servo and robot drives
* DC choppers
* Uninterruptible power supplies (UP