IXGT40N120B2D1 Datasheet - IXYS

IXGT40N120B2D1 High Voltage IGBTs

High Voltage IGBTs w/Diode IXGH40N120B2D1 IXGT40N120B2D1 VCES = 1200V IC110 = 40A VCE(sat) ≤ 3.5V tfi(typ) = 140ns Symbol VCES VCGR VGES VGEM IICC12150 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg TTLSOLD Md Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TTCC = = 25°C (Limited 110°C by Lead) TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 2Ω Clamped Inductive Load TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 second.

IXGT40N120B2D1 Features

* z International Standard Packages z IGBT and Anti-Parallel FRED for Resonant Power Supplies - Induction Heating - Rice Cookers z Square RBSOA z Fast Recovery Expitaxial Diode (FRED) - Soft Recovery with Low IRM Advantages z High Power Density z Low Gate Drive Requirement © 2009 IXYS CORPORATION, Al

IXGT40N120B2D1 Datasheet (209.26 KB)