Description
Advance Technical Data HiPerFASTTM IGBT Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching IXGH 40N60B2 IXGT 40N60B2 VCES .
Features
* z
G = Gate, E = Emitter,
Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s Md Weight Mounting torque (M3) TO-247 AD TO-268 SMD
1.13/10 Nm/lb. in. 6 4 g g
z z z
Medium frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity
Appl
Applications
* z
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 3.0 TJ = 25°C TJ = 150°C 5.0 50 1 ±100 TJ = 25°C 1.7 V µA mA nA V
z z
z z z
VGE(th) ICES IGES VCE(sat)
IC
= 250 µA, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = 30 A, VGE = 15