IXGT40N60B2D1 Datasheet - IXYS

IXGT40N60B2D1 IGBT

HiPerFASTTM IGBT Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Preliminary Data Sheet IXGH 40N60B2D1 IXGT 40N60B2D1 V CES IC25 VCE(sat) t fi typ = 600 V = 75 A < 1.7 V = 82 ns Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ V GES VGEM Continuous Transient IC25 TC = 25°C (limited by leads) IC110 TC = 110°C ICM TC = 25°C, 1 ms SSOA (RBSOA) PC V= GE 15 V, T VJ = 125°C, R G = 10 Ω Clamped inductive load @ ≤ 600.

IXGT40N60B2D1 Features

* z Medium frequency IGBT z Square RBSOA z High current handling capability z MOS Gate turn-on - drive simplicity Applications z PFC circuits z Uninterruptible power supplies (UPS) z Switched-mode and resonant-mode power supplies z AC motor speed control z DC servo and robot drives z DC choppers © 20

IXGT40N60B2D1 Datasheet (510.82 KB)