* Test Conditions IC = 250 μA, VGE = 0 V IC = 250 μA, VCE = VGE V = 0.8
* V CE CES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = 25 A, VGE = 15 V IC = 75 A TO-247 TO-268 6 g 4 g Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. 2500 V 3.0 5.0 V TJ = 125°C
IXGV25N250S Datasheet (220.56 KB)
IXGV25N250S
IXYS
220.56 KB
High voltage igbt.
Preliminary Technical Information High Voltage IGBT For Capacitor Discharge Applications IXGH25N250 IXGT25N250 IXGV25N250S VCES = 2500 V IC25 = 60.
📁 Related Datasheet
IXGA10N60 High speed IGBT (IXYS Corporation)
IXGA10N60A High speed IGBT (IXYS Corporation)
IXGA12N100 IGBT (IXYS Corporation)
IXGA12N100A IGBT (IXYS Corporation)
IXGA12N100AU1 IGBT (IXYS Corporation)
IXGA12N100U1 IGBT (IXYS Corporation)
IXGA12N120A2 IGBT (IXYS Corporation)
IXGA12N120A3 GenX3 1200V IGBTs (IXYS Corporation)
IXGA12N60B HiPerFAST IGBT (IXYS Corporation)
IXGA14N120B IGBT (IXYS Corporation)
