IXTY4N60P
IXYS
838.33kb
Polarhv power mosfet.
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IXTY4N60P - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTY4N60P
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 2.0Ω@VGS=10V ·Fully characterized avalanche voltag.
IXTY4N65X2 - Power MOSFET
(IXYS)
Preliminary Technical Information
X2-Class Power MOSFET
N-Channel Enhancement Mode
IXTY4N65X2 IXTA4N65X2 IXTP4N65X2
VDSS = ID25 = RDS(on)
650V 4A.
IXTY4N65X2 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 850mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.
IXTY4N70X2 - Power MOSFET
(IXYS)
Preliminary Technical Information
X2-Class Power MOSFET
N-Channel Enhancement Mode
IXTU4N70X2 IXTY4N70X2 IXTA4N70X2 IXTP4N70X2
VDSS =
ID25 = RDS(.
IXTY4N70X2 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS ≥ 700V ·Static Drain-Source On-Resistance
: RDS(on) ≤ 850mΩ@VGS= 10V ·Fast Sw.
IXTY44N10T - Power MOSFET
(IXYS Corporation)
TrenchTM Power MOSFET
IXTY44N10T IXTP44N10T
VDSS = 100V
ID25 = 44A RDS(on) 30m
N-Channel Enhancement Mode Avalanche Rated
Symbol
VDSS VDGR
VGSS.
IXTY44N10T - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IXTY44N10T
·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low g.
IXTY48P05T - Power MOSFET
(IXYS)
TrenchPTM Power MOSFETs
Preliminary Technical Information
IXTY48P05T IXTA48P05T IXTP48P05T
VDSS = ID25 = ≤RDS(on)
- 50V - 48A
30mΩ
P-Channel Enha.
IXTY01N100 - Power MOSFET
(IXYS Corporation)
High Voltage Power MOSFET
IXTU01N100 IXTY01N100
VDSS =
ID25 = RDS(on)
1000V 100mA 80
N-Channel Enhancement Mode
TO-251 (IXTU)
Symbol
VDSS VDG.
IXTY01N100D - N-Channel MOSFET
(IXYS Corporation)
Depletion Mode MOSFET
N-Channel
IXTY01N100D IXTU01N100D IXTP01N100D
D
G S
Symbol VDSX VDGX VGSX VGSM IDM PD
TJ TJM Tstg TL TSOLD Md Weight
Test Co.