* International Standard Packages
* Low QG
* Avalanche Rated
* Low Package Inductance
* Fast Intrinsic Rectifier Advantages
* High Power Density
* Easy to Mount
* Space Savings Applications
* DC-DC Converters
* Switch-Mode and Resonant-Mode Power Supplies
IXTY4N60P Datasheet (838.33 KB)
IXTY4N60P
IXYS
838.33 KB
Polarhv power mosfet.
PolarTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTU4N60P IXTY4N60P IXTA4N60P IXTP4N60P
Symbol
VDSS VDGR VGSS VGSM ID25 IDM IA EAS d.
📁 Related Datasheet
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Preliminary Technical Information
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VDSS =
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IXTY4N70X2 - N-Channel MOSFET
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TrenchTM Power MOSFET
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VDSS = 100V
ID25 = 44A RDS(on) 30m
N-Channel Enhancement Mode Avalanche Rated
Symbol
VDSS VDGR
VGSS.
IXTY44N10T - N-Channel MOSFET
(INCHANGE)
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INCHANGE Semiconductor
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Preliminary Technical Information
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VDSS = ID25 = ≤RDS(on)
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30mΩ
P-Channel Enha.
