IXXH50N60B3D1 - Extreme Light Punch Through IGBT
XPTTM 600V IGBT GenX3TM w/ Diode IXXH50N60B3D1 Extreme Light Punch Through IGBT for 5-30kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C( Chip Capability) TC = 110°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 5 Clamped Inductive Load VGE = 15V, VCE = 360V, TJ = 150°C RG = 22, Non Repeti
IXXH50N60B3D1 Features
* Optimized for 5-30kHz Switching
* Square RBSOA
* Anti-Parallel Ultra Fast Diode
* Avalanche Capability
* Short Circuit Capability
* International Standard Package Advantages
* High Power Density
* 175°C Rated
* Extremely Rugged
* Low Gate Drive Requirement A
