IXXH50N60C3D1 - 600V IGBT
XPTTM 600V IGBT GenX3TM w/ Diode IXXH50N60C3D1 Extreme Light Punch Through IGBT for 20-60 kHz Switching VCES = 600V I = 50A C110 V 2.30V CE(sat) tfi(typ) = 42ns Symbol VCES V CGR VGES VGEM I C25 IC110 IF110 ICM I A EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM T stg TL M d Weight Test Conditions TJ = 25°C to 175°C T J = 25°C to 175°C, R GE = 1M Continuous Transient T = 25°C (Chip Capability) C TC = 110°C TC = 110°C TC = 25°C, 1ms T = 25°C C TC = 25°C V GE = 15V, T VJ =
IXXH50N60C3D1 Features
* Optimized for 20-60kHz Switching
* Square RBSOA
* Anti-Parallel Ultra Fast Diode
* Avalanche Capability
* Short Circuit Capability
* International Standard Package Advantages
* High Power Density
* 175°C Rated
* Extremely Rugged
* Low Gate Drive Requirement
