IXXH50N60C3D1 Datasheet - IXYS

IXXH50N60C3D1 600V IGBT

XPTTM 600V IGBT GenX3TM w/ Diode IXXH50N60C3D1 Extreme Light Punch Through IGBT for 20-60 kHz Switching VCES = 600V I = 50A C110 V  2.30V CE(sat) tfi(typ) = 42ns Symbol VCES V CGR VGES VGEM I C25 IC110 IF110 ICM I A EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM T stg TL M d Weight Test Conditions TJ = 25°C to 175°C T J = 25°C to 175°C, R GE = 1M Continuous Transient T = 25°C (Chip Capability) C TC = 110°C TC = 110°C TC = 25°C, 1ms T = 25°C C TC = 25°C V GE = 15V, T VJ =.

IXXH50N60C3D1 Features

* Optimized for 20-60kHz Switching

* Square RBSOA

* Anti-Parallel Ultra Fast Diode

* Avalanche Capability

* Short Circuit Capability

* International Standard Package Advantages

* High Power Density

* 175°C Rated

* Extremely Rugged

* Low Gate Drive Requirement

IXXH50N60C3D1-IXYS.pdf