IXXH80N65B4H1 Datasheet (IXYS)

IXXH80N65B4H1, 650V IGBT

XPTTM 650V IGBT GenX4TM w/ Sonic Diode Extreme Light Punch Through IGBT for 5-30 kHz Switching IXXH80N65B4H1 Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C (Chip Capability) TC = 110°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 3 Clamped Inductive Load VGE = 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive TC = 25°C Maximu

IXXH80N65B4H1 Features

* Optimized for 5-30kHz Switching

* Square RBSOA

* Anti-Parallel Sonic Diode

* Short Circuit Capability

* International Standard Package Advantages

* High Power Density

* Extremely Rugged

* Low Gate Drive Requirement Applications

* Power Inverters

* UPS