IXXX100N60B3H1 - 600V IGBT
XPTTM 600V IGBTs GenX3TM w/ Diode IXXK100N60B3H1 IXXX100N60B3H1 Extreme Light Punch Through IGBT for 10-30kHz Switching Symbol VCES VCGR VGES VGEM IC25 ILRMS IC100 IF110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient 600 V 600 V ±20 V ±30 V TC = 25°C (Chip Capability) Terminal Current Limit TC = 100°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15.
IXXX100N60B3H1 Features
* z Optimized for 10-30kHz Switching z Square RBSOA z Avalanche Rated z Short Circuit Capability z Anti-Parallel Ultra Fast Diode z High Current Handling Capability
Advantages
z High Power Density z Low Gate Drive Requirement
Applications
z Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z