IXXX110N65B4H1 Datasheet - IXYS

IXXX110N65B4H1 Extreme Light Punch Through IGBT

XPTTM 650V GenX4TM IXXK110N65B4H1 w/ Sonic Diode IXXX110N65B4H1 Extreme Light Punch Through IGBT for 10-30kHz Switching VCES = 650V IC110 = 110A V CE(sat)  2.10V tfi(typ) = 43ns TO-264 (IXXK) Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 IF110 ICM SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient Maximum Ratings 650 V 650 V ±20 V ±30 V TC = 25°C (Chip Capability) Terminal Cur.

IXXX110N65B4H1 Features

* Optimized for 10-30kHz Switching

* Square RBSOA

* Short Circuit Capability

* Anti-Parallel Sonic Diode

* High Current Handling Capability

* International Standard Packages Advantages

* High Power Density

* Low Gate Drive Requirement Applications

* Power Inverter

IXXX110N65B4H1 Datasheet (395.96 KB)

IXXX110N65B4H1 Datasheet Preview — Preview of IXXX110N65B4H1 PDF

Datasheet Details

Part number:

IXXX110N65B4H1

Manufacturer:

IXYS

File Size:

395.96 KB

Description:

Extreme light punch through igbt.

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IXXX110N65B4H1 Extreme Light Punch Through IGBT IXYS

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