* Optimized for 20-60kHz Switching
* Square RBSOA
* Anti-Parallel Fast Diode
* Avalanche Rated
* Short Circuit Capability Advantages
* High Power Density
* Extremely Rugged
* Low Gate Drive Requirement Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified)
IXYQ40N65C3D1 Datasheet (298.05 KB)
IXYQ40N65C3D1
IXYS
298.05 KB
Igbt.
Preliminary Technical Information
XPTTM 650V IGBT GenX3TM w/ Diode
IXYH40N65C3D1 IXYQ40N65C3D1
Extreme Light Punch Through IGBT for 20-60 kHz Switc.
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