* Optimized for Low 5-30kHz Switching
* Square RBSOA
* Anti-Parallel Fast Diode
* Avalanche Rated
* Short Circuit Capability Advantages
* High Power Density
* Extremely Rugged
* Low Gate Drive Requirement Symbol Test Conditions (TJ = 25C, Unless Otherwise Specifi
IXYQ30N65B3D1 Datasheet (198.55 KB)
IXYQ30N65B3D1
IXYS
198.55 KB
Igbt.
Advance Technical Information
XPTTM 650V IGBT GenX3TM w/ Diode
Extreme Light Punch Through IGBT for 5-30kHz Switching
IXYH30N65B3D1 IXYQ30N65B3D1
V.
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