Description
Advance Technical Information XPTTM 650V IGBT GenX3TM w/ Diode Extreme Light Punch Through IGBT for 5-30kHz Switching IXYH30N65B3D1 IXYQ30N65B3D1 V.
Features
* Optimized for Low 5-30kHz Switching
* Square RBSOA
* Anti-Parallel Fast Diode
* Avalanche Rated
* Short Circuit Capability
Advantages
* High Power Density
* Extremely Rugged
* Low Gate Drive Requirement
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specifi
Applications
* Power Inverters
* UPS
* Motor Drives
* SMPS
* PFC Circuits
* Battery Chargers
* Welding Machines
* Lamp Ballasts
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DS100637(11/14)
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs IC = 30A, VCE = 10V,