MITA30WB600TMH Module Datasheet - IXYS

TAGS

📁 Related Datasheet

MITA10WB1200TMH - Converter - Brake - Inverter Module (IXYS)
Advanced Technical Information MITA10WB1200TMH Converter - Brake - Inverter Module Standard Trench IGBT Single Phase Brake Three Phase Rectifier.

MIT-4A11 - SUBMINIATURE PHOTOINTERRUPTER (Unity Opto Technology)
SUBMINIATURE PHOTOINTERRUPTER Description The MIT-4A11A consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor , dou.

MIT-4A11A - SUBMINIATURE PHOTOINTERRUPTER (Unity Opto Technology)
SUBMINIATURE PHOTOINTERRUPTER Description The MIT-4A11A consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor , dou.

MIT-4A11B - SUBMINIATURE PHOTOINTERRUPTER (Unity Opto Technology)
SUBMINIATURE PHOTOINTERRUPTER Description The MIT-4A11B consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor , dou.

MIT-5A116 - SLOTTED PHOTOINTERRUPTER (Unity Opto Technology)
SLOTTED PHOTOINTERRUPTER Description The MIT-5A116 consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a.

MIT-5A116-U - SLOTTED PHOTOINTERRUPTER (Unity Opto Technology)
SLOTTED PHOTOINTERRUPTER Description The MIT-5A116-U consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in.

MIT-5A117 - SLOTTED PHOTOINTERRUPTER (Unity Opto Technology)
SLOTTED PHOTOINTERRUPTER Description The MIT-5A117 consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a.

MIT-5A11B - SLOTTED PHOTOINTERRUPTER (Unity Opto Technology)
SLOTTED PHOTOINTERRUPTER Description The MIT-5A11B consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a.

MIT-5A11C - SLOTTED PHOTOINTERRUPTER (Unity Opto Technology)
SLOTTED PHOTOINTERRUPTER Description The MIT-5A11C consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a.

MIT-5A11J - SLOTTED PHOTOINTERRUPTER (Unity Opto Technology)
SLOTTED PHOTOINTERRUPTER Description The MIT-5A11J consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a.

Stock and price