* / Advantages:
* Trench IGBT - low VCE(sat) - easy paralleling due to the positive temperature coefficient of the on-state voltage - Tvjm = 175°C - square RBSOA @ 2x Ic - short circuit rated for 10 μsec. - low gate charge - low EMI
* Free wheeling diode - fast and soft reverse r
MITH200PF1700LP Datasheet (204.18 KB)
MITH200PF1700LP
IXYS
204.18 KB
Igbt.
IGBT Module
Phase leg
Part number MITH200PF1700LP
MITH200PF1700LP
tentative
VCES IC25 VCE(sat)
= 1700 V = 285 A = 1.90 V
76
54
T2
T1
D2
D1
.
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