MITB15WB1200TMH Datasheet, Module, IXYS

MITB15WB1200TMH Features

• Module
• High level of integration - only one power semiconductor module required for the whole drive
• Inverter with low loss Trench IGBTs - very low saturation vo

PDF File Details

Part number:

MITB15WB1200TMH

Manufacturer:

IXYS

File Size:

165.45kb

Download:

📄 Datasheet

Description:

Converter - brake - inverter module.

TAGS

MITB15WB1200TMH

IXYS

📁 Related Datasheet

MITB10WB1200TMH - Converter - Brake - Inverter Module (IXYS)
Advanced Technical Information MITB10WB1200TMH Converter - Brake - Inverter Module Low Loss Trench IGBT Three Phase Rectifier Brake Three Phase C.

MIT-4A11 - SUBMINIATURE PHOTOINTERRUPTER (Unity Opto Technology)
SUBMINIATURE PHOTOINTERRUPTER Description The MIT-4A11A consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor , dou.

MIT-4A11A - SUBMINIATURE PHOTOINTERRUPTER (Unity Opto Technology)
SUBMINIATURE PHOTOINTERRUPTER Description The MIT-4A11A consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor , dou.

MIT-4A11B - SUBMINIATURE PHOTOINTERRUPTER (Unity Opto Technology)
SUBMINIATURE PHOTOINTERRUPTER Description The MIT-4A11B consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor , dou.

MIT-5A116 - SLOTTED PHOTOINTERRUPTER (Unity Opto Technology)
SLOTTED PHOTOINTERRUPTER Description The MIT-5A116 consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a.

MIT-5A116-U - SLOTTED PHOTOINTERRUPTER (Unity Opto Technology)
SLOTTED PHOTOINTERRUPTER Description The MIT-5A116-U consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in.

MIT-5A117 - SLOTTED PHOTOINTERRUPTER (Unity Opto Technology)
SLOTTED PHOTOINTERRUPTER Description The MIT-5A117 consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a.

MIT-5A11B - SLOTTED PHOTOINTERRUPTER (Unity Opto Technology)
SLOTTED PHOTOINTERRUPTER Description The MIT-5A11B consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a.

MIT-5A11C - SLOTTED PHOTOINTERRUPTER (Unity Opto Technology)
SLOTTED PHOTOINTERRUPTER Description The MIT-5A11C consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a.

MIT-5A11J - SLOTTED PHOTOINTERRUPTER (Unity Opto Technology)
SLOTTED PHOTOINTERRUPTER Description The MIT-5A11J consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a.