MIT-5A116 Datasheet, Photointerrupter, Unity Opto Technology

MIT-5A116 Features

• Photointerrupter A 7.5 ± 0.3 (.295) 3.7 ± 0.2 (.146) 10.0 (.394) 2.5 (.098) Unit mA V mW V V mW mW Unity Opto Technology Co., Ltd. 7.0 (.276) 04/01/2002 MIT-5A116 Optical-Electrical Character

PDF File Details

Part number:

MIT-5A116

Manufacturer:

Unity Opto Technology

File Size:

60.71kb

Download:

📄 Datasheet

Description:

Slotted photointerrupter. The MIT-5A116 consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a black plastic housi

TAGS

MIT-5A116

Unity Opto Technology

📁 Related Datasheet

MIT-5A116-U - SLOTTED PHOTOINTERRUPTER (Unity Opto Technology)
SLOTTED PHOTOINTERRUPTER Description The MIT-5A116-U consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in.

MIT-5A117 - SLOTTED PHOTOINTERRUPTER (Unity Opto Technology)
SLOTTED PHOTOINTERRUPTER Description The MIT-5A117 consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a.

MIT-5A11B - SLOTTED PHOTOINTERRUPTER (Unity Opto Technology)
SLOTTED PHOTOINTERRUPTER Description The MIT-5A11B consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a.

MIT-5A11C - SLOTTED PHOTOINTERRUPTER (Unity Opto Technology)
SLOTTED PHOTOINTERRUPTER Description The MIT-5A11C consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a.

MIT-5A11J - SLOTTED PHOTOINTERRUPTER (Unity Opto Technology)
SLOTTED PHOTOINTERRUPTER Description The MIT-5A11J consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a.

MIT-4A11 - SUBMINIATURE PHOTOINTERRUPTER (Unity Opto Technology)
SUBMINIATURE PHOTOINTERRUPTER Description The MIT-4A11A consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor , dou.

MIT-4A11A - SUBMINIATURE PHOTOINTERRUPTER (Unity Opto Technology)
SUBMINIATURE PHOTOINTERRUPTER Description The MIT-4A11A consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor , dou.

MIT-4A11B - SUBMINIATURE PHOTOINTERRUPTER (Unity Opto Technology)
SUBMINIATURE PHOTOINTERRUPTER Description The MIT-4A11B consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor , dou.

MITA10WB1200TMH - Converter - Brake - Inverter Module (IXYS)
Advanced Technical Information MITA10WB1200TMH Converter - Brake - Inverter Module Standard Trench IGBT Single Phase Brake Three Phase Rectifier.

MITA30WB600TMH - Converter - Brake - Inverter Module (IXYS)
Advanced Technical Information MITA30WB600TMH Converter - Brake - Inverter Module Trench IGBT Single Phase Brake Three Phase Rectifier Chopper .