MIT-4A11B Datasheet, Photointerrupter, Unity Opto Technology

MIT-4A11B Features

• Photointerrupter l l l l Ultra-compact PWB mounting type package High sensing accuracy ( Slit width: 0.3mm ) Gap between light emitter and detector: 1.2mm 4.2 1.5 (1.0) (0.3) 1.2 2.8 3.9 5.2 Appli

PDF File Details

Part number:

MIT-4A11B

Manufacturer:

Unity Opto Technology

File Size:

49.62kb

Download:

📄 Datasheet

Description:

Subminiature photointerrupter. The MIT-4A11B consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor , double-layer mold plastic pa

MIT-4A11B Application

• Applications l l l Cameras Floppy disk drives Printer 1.5±0.1Hold ± 4-0.5 4-0.15 4.0 MIN.
• 2.54
• 3.2 NOTE 1. Tolerance is ± 0.2

TAGS

MIT-4A11B

Unity Opto Technology

📁 Related Datasheet

MIT-4A11 - SUBMINIATURE PHOTOINTERRUPTER (Unity Opto Technology)
SUBMINIATURE PHOTOINTERRUPTER Description The MIT-4A11A consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor , dou.

MIT-4A11A - SUBMINIATURE PHOTOINTERRUPTER (Unity Opto Technology)
SUBMINIATURE PHOTOINTERRUPTER Description The MIT-4A11A consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor , dou.

MIT-5A116 - SLOTTED PHOTOINTERRUPTER (Unity Opto Technology)
SLOTTED PHOTOINTERRUPTER Description The MIT-5A116 consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a.

MIT-5A116-U - SLOTTED PHOTOINTERRUPTER (Unity Opto Technology)
SLOTTED PHOTOINTERRUPTER Description The MIT-5A116-U consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in.

MIT-5A117 - SLOTTED PHOTOINTERRUPTER (Unity Opto Technology)
SLOTTED PHOTOINTERRUPTER Description The MIT-5A117 consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a.

MIT-5A11B - SLOTTED PHOTOINTERRUPTER (Unity Opto Technology)
SLOTTED PHOTOINTERRUPTER Description The MIT-5A11B consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a.

MIT-5A11C - SLOTTED PHOTOINTERRUPTER (Unity Opto Technology)
SLOTTED PHOTOINTERRUPTER Description The MIT-5A11C consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a.

MIT-5A11J - SLOTTED PHOTOINTERRUPTER (Unity Opto Technology)
SLOTTED PHOTOINTERRUPTER Description The MIT-5A11J consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a.

MITA10WB1200TMH - Converter - Brake - Inverter Module (IXYS)
Advanced Technical Information MITA10WB1200TMH Converter - Brake - Inverter Module Standard Trench IGBT Single Phase Brake Three Phase Rectifier.

MITA30WB600TMH - Converter - Brake - Inverter Module (IXYS)
Advanced Technical Information MITA30WB600TMH Converter - Brake - Inverter Module Trench IGBT Single Phase Brake Three Phase Rectifier Chopper .