MIXD50W650TED Trench XPT IGBT

IXYS

Description

Six-Pack Trench XPT IGBT MIXD50W650TED VCES = 650 V IC25 = 71 A VCE(sat) typ.= 1.55 V Part name (Marking on product) MIXD50W650TED 25, 26 17 N.

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Datasheet Specifications

Part number: MIXD50W650TED
Manufacturer: IXYS
File Size: 202.85 KB
Datasheet: MIXD50W650TED-IXYS.pdf
Description: Trench XPT IGBT

Features

* Easy paralleling due to the positive temperature coefficient of the on-state voltage
* Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - square RBSOA @ 3x IC - low EMI
* Thin wafer technology

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MIXD50W650TED Trench XPT IGBT IXYS

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