* Easy paralleling due to the positive temperature coefficient of the on-state voltage
* Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - square RBSOA @ 3x IC - low EMI
* Thin wafer technology
MIXD50W650TED Datasheet (202.85 KB)
MIXD50W650TED
IXYS
202.85 KB
Trench xpt igbt.
Six-Pack Trench XPT IGBT
MIXD50W650TED
VCES = 650 V IC25 = 71 A VCE(sat) typ. = 1.55 V
Part name (Marking on product) MIXD50W650TED
25, 26
17 N.
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