* / Advantages:
* High level of integration - only one power semiconductor module required for the whole drive
* Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 2x Ic
* Trench XPT de
MIXD600PF650TSF Datasheet (218.19 KB)
MIXD600PF650TSF
IXYS
218.19 KB
Xpt igbt.
XPT IGBT Module
Phase leg + free wheeling Diodes + NTC
MIXD600PF650TSF
VCES = 2x 650 V
IC25 = 750 A
VCE(sat) =
1.5 V
tentative
Part number MI.
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