Datasheet Specifications
- Part number
- MMIX4B12N300
- Manufacturer
- IXYS
- File Size
- 309.90 KB
- Datasheet
- MMIX4B12N300-IXYS.pdf
- Description
- Bipolar MOS Transistor
Description
Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor (Electrically Isolated Tab) MMIX4B12N300 C1 .
Features
* z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 4000V~ Electrical Isolation z High Blocking Voltage z High Peak Current Capability z Low Saturation Voltage Advantages Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. MApplications
* z Switch-Mode and Resonant-Mode Power Supplies z Capacitor Discharge Circuits © 2012 IXYS CORPORATION, All Rights Reserved DS100392A(06/12) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfS IC = IC90, VCE = 10V, Note 1 6.5 10.8 S IC(ON)MMIX4B12N300 Distributors
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