MMIX4B22N300 Monolithic Bipolar MOS Transistor

IXYS

Description

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor MMIX4B22N300 C1 C2 (Electrically Isolated Tab) G1 E1C3 G3 G2 E2C4 G4 E3E4 .

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Datasheet Specifications

Part number: MMIX4B22N300
Manufacturer: IXYS
File Size: 238.05 KB
Datasheet: MMIX4B22N300-IXYS.pdf
Description: Monolithic Bipolar MOS Transistor

Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface
* 4000V~ Electrical Isolation
* High Blocking Voltage
* High Peak Current Capability
* Low Saturation Voltage Advantages
* Low Gate Drive Requirement

Applications

* Switch-Mode and Resonant-Mode Power Supplies
* Capacitor Discharge Circuits © 2018 IXYS CORPORATION, All Rights Reserved DS100627A(5/18) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfS IC = 22A, VCE = 10V, Note 1 13 22 S Ci

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MMIX4B22N300 Monolithic Bipolar MOS Transistor IXYS

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