* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface
* 4000V~ Electrical Isolation
* High Blocking Voltage
* High Peak Current Capability
* Low Saturation Voltage Advantages
* Low Gate Drive Requirement
* High Power Density Applications
MMIX4B22N300 Datasheet (238.05 KB)
MMIX4B22N300
IXYS
238.05 KB
Monolithic bipolar mos transistor.
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor MMIX4B22N300 C1 C2 (Electrically Isolated Tab) G1 E1C3 G3 G2 E2C4 G4 E3E4 .
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