MMIX4G20N250 Datasheet - IXYS

MMIX4G20N250 High Voltage IGBT

High Voltage IGBT For Capacitor Discharge Applications ( Electrically Isolated Tab) H-Bridge Configuration MMIX4G20N250 C1 G1 E1C3 G3 Q1 Q2 Q3 Q4 C2 G2 E2C4 G4 E3E4 Symbol V CES VCGR V GES VGEM I C25 IC90 I CM SSOA (RBSOA) PC TJ TJM Tstg T SOLD FC V ISOL Weight Test Conditions T = 25°C to 150°C J TJ = 25°C to 150°C, RGE = 1M Continuous Transient T = 25°C C TC = 90°C T = 25°C, V = 19V, 1ms C GE 10ms VGE= 15V, TVJ = 125°C, RG = 20 Clamped Inductive Load TC = 25°C Plastic Body for.

MMIX4G20N250 Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate

* Isolated Mounting Surface

* 4000V~ Electrical Isolation

* High Peak Current Capability

* Low Saturation Voltage

* Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages

* High Power Density

* Easy t

MMIX4G20N250 Datasheet (1.30 MB)

MMIX4G20N250 Datasheet Preview — Preview of MMIX4G20N250 PDF

Datasheet Details

Part number:

MMIX4G20N250

Manufacturer:

IXYS

File Size:

1.30 MB

Description:

High voltage igbt.

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MMIX4G20N250 High Voltage IGBT IXYS

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