MMIX4G20N250 High Voltage IGBT

IXYS

Description

High Voltage IGBT For Capacitor Discharge Applications ( Electrically Isolated Tab) H-Bridge Configuration MMIX4G20N250 C1 G1 E1C3 G3 Q1 Q2 Q3 Q4 .

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Datasheet Specifications

Part number: MMIX4G20N250
Manufacturer: IXYS
File Size: 1.30 MB
Datasheet: MMIX4G20N250-IXYS.pdf
Description: High Voltage IGBT

Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface
* 4000V~ Electrical Isolation
* High Peak Current Capability
* Low Saturation Voltage
* Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages
* High Power Density
* Easy t

Applications

* ( Electrically Isolated Tab) H-Bridge Configuration MMIX4G20N250 C1 G1 E1C3 G3 Q1 Q2 Q3 Q4 C2 G2 E2C4 G4 E3E4 Symbol V CES VCGR V GES VGEM I C25 IC90 I CM SSOA (RBSOA) PC TJ TJM Tstg T SOLD FC V ISOL Weight Test Conditions T = 25°C to 150°C J TJ = 25°C to 150°C, RGE = 1M Continuous Transient

MMIX4G20N250 Distributors

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MMIX4G20N250 High Voltage IGBT IXYS

IXYS MMIX4G20N250-like datasheet