MMIX4G20N250 Datasheet - IXYS

MMIX4G20N250 High Voltage IGBT

High Voltage IGBT For Capacitor Discharge Applications ( Electrically Isolated Tab) H-Bridge Configuration MMIX4G20N250 C1 G1 E1C3 G3 Q1 Q2 Q3 Q4 C2 G2 E2C4 G4 E3E4 Symbol V CES VCGR V GES VGEM I C25 IC90 I CM SSOA (RBSOA) PC TJ TJM Tstg T SOLD FC V ISOL Weight Test Conditions T = 25°C to 150°C J TJ = 25°C to 150°C, RGE = 1M Continuous Transient T = 25°C C TC = 90°C T = 25°C, V = 19V, 1ms C GE 10ms VGE= 15V, TVJ = 125°C, RG = 20 Clamped Inductive Load TC = 25°C Plastic Body for.

MMIX4G20N250 Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate

* Isolated Mounting Surface

* 4000V~ Electrical Isolation

* High Peak Current Capability

* Low Saturation Voltage

* Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages

* High Power Density

* Easy t

MMIX4G20N250-IXYS.pdf

MMIX4G20N250 Datasheet Preview — Preview of MMIX4G20N250 PDF

Datasheet Details

Part number:

MMIX4G20N250

Manufacturer:

IXYS

File Size:

1.30 MB

Description:

High voltage igbt.

📁 Related Datasheet

MMIX4B12N300 Bipolar MOS Transistor (IXYS)

MMIX4B20N300 Bipolar MOS Transistor (IXYS)

MMIX4B22N300 Monolithic Bipolar MOS Transistor (IXYS)

MMIX1F230N20T Power MOSFET (IXYS)

MMIX1F44N100Q3 Power MOSFET (IXYS)

MMIX1G75N250 High Voltage IGBT (IXYS)

MMIX1X200N60B3H1 Extreme Light Punch Through IGBT (IXYS)

MMIX1Y100N120C3H1 High-Speed IGBT (IXYS)

TAGS

MMIX4G20N250 MMIX4G20N250 High Voltage IGBT IXYS

MMIX4G20N250 Distributor