MMIX4G20N250 - High Voltage IGBT
High Voltage IGBT For Capacitor Discharge Applications ( Electrically Isolated Tab) H-Bridge Configuration MMIX4G20N250 C1 G1 E1C3 G3 Q1 Q2 Q3 Q4 C2 G2 E2C4 G4 E3E4 Symbol V CES VCGR V GES VGEM I C25 IC90 I CM SSOA (RBSOA) PC TJ TJM Tstg T SOLD FC V ISOL Weight Test Conditions T = 25°C to 150°C J TJ = 25°C to 150°C, RGE = 1M Continuous Transient T = 25°C C TC = 90°C T = 25°C, V = 19V, 1ms C GE 10ms VGE= 15V, TVJ = 125°C, RG = 20 Clamped Inductive Load TC = 25°C Plastic Body for
MMIX4G20N250 Features
* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface
* 4000V~ Electrical Isolation
* High Peak Current Capability
* Low Saturation Voltage
* Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages
* High Power Density
* Easy t
