MWI300-12E9 Datasheet (IXYS)

MWI300-12E9, IGBT Module

MWI 300-12 E9 IGBT Modules Sixpack 15 28 16 17 29 13 14 2 20 21 22 11/12 18 19 1 4 25 26 27 9/10 23 24 3 IC80 = 375 A VCES = 1200 V VCE(sat) typ.

= 2.0 V 6 7/8 E72873 5 See outline drawing for pin arrangement phase-out IGBTs Symbol VCES VGES IC25 IC80 RBSOA tSC (SCSOA) Ptot Conditions TVJ = 25°C to 125°C TC = 25°C TC = 80°C RG = 3.3 Ω; TVJ = 125°C Clamped inductive load; L = 100 µH VCE = 900 V; VGE = ±15 V; RG = 3.3 Ω TVJ = 125°C; non-repetitive; VCEmax < VCES TC = 25°C Maximum R

MWI300-12E9 Features

* NPT3 IGBT technology

* low saturation voltage

* low switching losses

* square RBSOA, no latch up

* high short circuit capability

* positive temperature coefficient for easy parallelling

* MOS input, voltage controlled

* ultra fast fre