* Low rDS(on)
* Ultra Low Gate Charge Qg VDS=480V 82nC D Typ
* High dv/dt capability
* High Unclamped Inductive Switching (UIS) capability
* High peak current capability
* Increased transconductance performance G
* Optimized design for hi
ICE15N73 Datasheet (760.60 KB)
ICE15N73
Icemos
760.60 KB
N-channel mosfet.
Preliminary Data Sheet ICE15N73 ICE15N73 N-Channel Enhancement Mode MOSFET ID V(BR)DSS Product Summary TA=25oC ID=250uA 15A 730V Max Min rDS(on.
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