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ICE11N70 Datasheet - Micross Components

ICE11N70 - N-Channel MOSFET

G TO-220 Max Min Typ Typ D S Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt Ruggedness VGS Ptot Tj, Tstg Gate Source Voltage Power Dissipation Operating

ICE11N70 Features

* r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified P

ICE11N70-MicrossComponentspdf

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Datasheet Details

Part number:

ICE11N70

Manufacturer:

Micross Components

File Size:

719.64 KB

Description:

N-channel mosfet.

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